TK12J60W - Silicon N-Channel MOSFET

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Toshiba Semiconductor

Part number	TK12J60W
Manufacturer	Toshiba Semiconductor
File Size	244.66 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK12J60W Datasheet
Additional preview pages of the TK12J60W datasheet.

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-3P(N) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avala.

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Published: Sep 20, 2014 |