TJ30S06M3L
Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 16.8 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 m A)
3. Packaging and Internal Circuit
DPAK+
1: Gate 2: Drain (heatsink) 3: Source
©2020 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2011-03
2020-06-24 Rev.9.0
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-60
Gate-source voltage
VGSS
-20/+10
Drain current (DC)
(Note 1)
-30
Drain current (pulsed)
(Note 1)
-60
Power dissipation
(Tc = 25)
Single-pulse avalanche energy
(Note 2)
71 m J
Avalanche...
