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SSM6J25FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
SSM6J25FE
High Speed Switching Applications
• Optimum for high-density mounting in small packages • Low on-resistance: Ron = 260mΩ (max) (@VGS = -4 V)
Ron = 430mΩ (max) (@VGS = -2.5 V)
Unit: mm
1.6±0.05 1.2±0.05
0.2±0.05
1.6±0.05 1.0±0.05 0.5 0.5
Absolute Maximum Ratings (Ta = 25°C)
1
6
Characteristics Drain-Source voltage
Symbol VDS
Rating
Unit
-20
V
2
5
3
4
0.12±0.05
0.55±0.05
Gate-Source voltage
VGSS
± 12
V
Drain current
DC
ID
-0.5
A
Pulse
IDP
-1.5
Drain power dissipation Channel temperature Storage temperature range
PD
500
mW
(Note 1)
Tch
150
°C
Tstg
−55 to 150
°C
1,2,5,6 :Drain 3 :Gate ES6 4 :Source
Note:
Using continuously under heavy loads (e.g.
SSM6J25FE Datasheet
