SSM4K27CT - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

Part number	SSM4K27CT
Manufacturer	Toshiba
File Size	259.71 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM4K27CT Datasheet

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SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) SSM4K27CT ○ Switching Applications • Small package • Low on-resistance: RDS(ON) = 205 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 260 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 390 mΩ (max) (@VGS = 1.8 V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Drain-Source voltage VDSS 20 V Gate-Source voltage VGSS ±12 V Drain current DC ID Pulse IDP 0.5 A 1.0 Power dissipation PD (Note 1) 400 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC ⎯ temperature/current/voltage and the significant change in temperature, etc.