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SSM3K56CT - N-Channel MOSFET

Features

  • (1) (2) 1.5-V gate drive voltage. Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Configuration 1.Gate 2.Source 3.Drain CST3 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Channel temperature St.

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SSM3K56CT MOSFETs Silicon N-Channel MOS SSM3K56CT 1. Applications • High-Speed Switching 2. Features (1) (2) 1.5-V gate drive voltage. Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Configuration 1.Gate 2.Source 3.Drain CST3 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Channel temperature Storage temperature (Note 1) (Note 1),(Note 2) (Note 3) Symbol VDSS VGSS ID IDP PD Tch Tstg Rating 20 ±8 800 1600 500 150 -55 to 150 mW  mA Unit V Using continuously under heavy loads (e.g.
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