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SSM3K15FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15FU
High Speed Switching Applications Analog Switch Applications
• Small package • Low on resistance
: Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature
VDS
30
V
VGSS
±20
V
ID
100 mA
IDP
200
PD(Note 1)
150
mW
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM3K15FU Datasheet
