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SSM3K131TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
SSM3K131TU
○ High-Speed Switching Applications
• 4.5-V drive • Low ON-resistance : Ron = 41.5 mΩ (max) (@VGS = 4.5 V)
: Ron = 27.6 mΩ (max) (@VGS = 10 V)
2.1±0.1 1.7±0.1
Unit: mm
0.3-+00..015
2.0±0.1 0.65±0.05
0.166±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
VDSS
30
V
Gate-Source voltage
VGSS
±20
V
Drain current
DC
ID (Note 1)
6.0
A
Pulse
IDP (Note 1)
12.0
PD (Note 2)
800
Drain power dissipation
PD (Note 3)
500
mW
t = 10 s
1000
0.7±0.05
1
2
3
Channel temperature
Tch
150
°C
1: Gate
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g.
SSM3K131TU Datasheet
