SSM3K123TU - Silicon N-Channel MOSFET

Datasheet Details

Part number	SSM3K123TU
Manufacturer	Toshiba Electronic Devices & Storage
File Size	166.71 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K123TU Datasheet
Additional preview pages of the SSM3K123TU datasheet.

📁 Similar Datasheet

SSM3K15ACTC - Silicon N-Channel MOSFET (Toshiba)
SSM3K16CTC - Silicon N-Channel MOSFET (Toshiba)
SSM3K2615R - Silicon N-Channel MOSFET (Toshiba)
SSM3K2615TU - Silicon N-Channel MOSFET (Toshiba)
SSM3K318R - Silicon N-Channel MOSFET (Toshiba)
SSM3K318T - N-Channel 60V MOSFET (VBsemi)
SSM3K320T - Silicon N-Channel MOSFET (Toshiba)
SSM3K333R - N-CHANNEL POWER MOSFET (UTC)
SSM3K333RG-AE3-R - N-CHANNEL POWER MOSFET (UTC)
SSM3K333RL-AE3-R - N-CHANNEL POWER MOSFET (UTC)

Other Datasheets by Toshiba Semiconductor

SSM3K121TU - Silicon N-Channel MOSFET
SSM3K122TU - Silicon N-Channel MOSFET
SSM3K124TU - Silicon N-Channel MOSFET
SSM3K127TU - Silicon N-Channel MOSFET
SSM3K128TU - MOSFET
SSM3K12T - CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category
SSM3K101TU - Silicon N Channel MOS Type High Speed Switching Applications
SSM3K102TU - High Speed Switching Applications

Full PDF Text Transcription

Click to expand full text

SSM3K123TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K123TU Power Management Switch Applications High-Speed Switching Applications • 1.5 V drive • Low ON-resistance: Ron = 66 mΩ (max) (@VGS = 1.5 V) Ron = 43 mΩ (max) (@VGS = 1.8 V) Ron = 32 mΩ (max) (@VGS = 2.5 V) Ron = 28 mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating 20 ± 10 4.2 8.4 800 500 150 −55~150 Unit V V A mW °C °C Note: Note 1: Note 2: Using continuously under heavy loads (e.g.

Published: Feb 14, 2008 |