SSM3J325F
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
○ Power Management Switch Applications
Unit: mm
- 1.5-V drive
- Low ON-resistance: RDS(ON) = 311 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 231 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 179 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 150 mΩ (max) (@VGS = -4.5 V)
+0.5 2.5-0.3
+0.25 1.5-0.15
+0.1 0.4-0.05
2.9±0.2 1.9 0.95 0.95
Absolute Maximum Ratings (Ta = 25°C)
0.3 +0.1 0.16-0.06
+0.2 1.1-0.1
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
-20
Gate-source voltage
VGSS
±8
Drain current
ID (Note 1)
-2.0
Pulse
IDP (Note 1)
-4.0
Power dissipation
PD (Note 2)
600 m W t =...
