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RN2210,RN2211
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2210,RN2211
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1210, 1211 Unit: mm
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating −50 −50 −5 −100 300 150 −55~150 Unit V V V mA mW °C °C
JEDEC EIAJ TOSHIBA Weight: 0.
RN2211 Datasheet
