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RN2011 - Silicon PNP Epitaxial Type Transistor

This page provides the datasheet information for the RN2011, a member of the RN2010 Silicon PNP Epitaxial Type Transistor family.

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Datasheet Details

Part number RN2011
Manufacturer Toshiba Semiconductor
File Size 242.81 KB
Description Silicon PNP Epitaxial Type Transistor
Datasheet download datasheet RN2011 Datasheet
Additional preview pages of the RN2011 datasheet.

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Full PDF Text Transcription

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RN2010,RN2011 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2010,RN2011 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z Complementary to RN1010, RN1011 Unit: mm Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC* Tj Tstg Rating −50 −50 −5 −100 400 150 −55~150 Unit V V V mA mW °C °C JEDEC TO−92 JEITA SC−43 TOSHIBA 2−5F1B Weight: 0.21g (typ.) Note: Using continuously under heavy loads (e.g.
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