Full PDF Text Transcription for K7A50D (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K7A50D. For precise diagrams, and layout, please refer to the original PDF.
TK7A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK7A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1....
View more extracted text
tor Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 ±30 7 28 35 129 7 3.
K7A50D Datasheet
