Full PDF Text Transcription for K3869 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K3869. For precise diagrams, and layout, please refer to the original PDF.
2SK3869 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3869 Switching Regulator Applications Unit: mm • Low drain-source ON-r...
View more extracted text
3869 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 450 V) • Enhancement model: Vth = 2.0 to 4.
More Datasheets from Toshiba
K3869 Datasheet
