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K2961. For precise diagrams, and layout, please refer to the original PDF.
2SK2961 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Unit...
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2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Unit: mm z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 0.2 Ω (typ.) : |Yfs| = 2.0 S (typ.) z Low leakage current : IDSS = 100 μA (VDS = 60 V) z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating 60 60 ±20 2.0 6.0 0.
K2961 Datasheet
