J380 - 2SJ380

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mputer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc. ). These.

Toshiba Semiconductor

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Part number	J380
Manufacturer	Toshiba Semiconductor
File Size	236.29 KB
Description	2SJ380
Datasheet	J380 Datasheet
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www.DataSheet.co.kr 2SJ380 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ380 Relay Drive, DC-DC Converter and Motor Drive Applications • • • • • 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) High forward transfer admittance: |Yfs| = 7.7 S (typ.) Low leakage current: IDSS = −100 μA (max) (VDS = −100 V) Enhancement mode: Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating −100 −100 ±20 −12 −48 35 312 −12 3.

Published: Dec 15, 2011 |