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HN4G01J
TOSHIBA Multi Chip Discrece Device
HN4G01J
Audio Frequency General Purpose Amplifier Applications
Q1
z z z z Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Unit: mm
Q2
z Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.
Q1 : 2SC4837F Q2 : RN1103F
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating 60 50 5 150 30 Unit V V V mA mA
1.BASE1 2.EMITTER 3.BASE2 4.COLLECTOR2 5.
HN4G01J Datasheet
