HN2A26FS - Frequency General-Purpose Amplifier Applications

Toshiba Semiconductor

Datasheet Details

Part number	HN2A26FS
Manufacturer	Toshiba Semiconductor
File Size	169.79 KB
Description	Frequency General-Purpose Amplifier Applications
Datasheet	HN2A26FS Datasheet
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HN2A26FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN2A26FS Frequency General-Purpose Amplifier Applications Unit: mm • • • • • • Two devices are incorporated into a fine-pitch, Small-Mold (6-pin) package. High voltage: VCEO = −50 V High current: IC = −100 mA (max) High hFE: hFE = 120 to 400 Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) Lead (Pb) - free +0.02 -0.04 1.0±0.05 0.1±0.05 0.8±0.05 0.1±0.05 0.35 0.35 1.0±0.05 0.7±0.

Published: Jan 31, 2010 |