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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSR05S30U
DSR05S30U
High Speed Switching Applications
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range
VR IO IFSM Tj Tstg
30 500 ＊
5 125 −55 to 125
V mA A °C °C
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
USC
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.
DSR05S30U Datasheet
