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CMZ12 - Silicon Diffused Type Zener Diode

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Part number CMZ12
Manufacturer Toshiba Semiconductor
File Size 288.88 KB
Description Silicon Diffused Type Zener Diode
Datasheet download datasheet CMZ12 Datasheet
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Other Datasheets by Toshiba Semiconductor
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Full PDF Text Transcription

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○ Surge absorber CMZ12 to CMZ51 TOSHIBA Zener Diode Silicon Diffused Type CMZ12 to CMZ51 Unit: mm • Average power dissipation : P = 2 W • Zener voltage : VZ = 12 to 51 V • Suitable for compact assembly due to small surface mount package “M−FLATTM” (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Power dissipation Symbol Rating Unit P 2 (Note 1) W 1. Anode 2. Cathode Junction temperature Tj −40 to 150 °C Storage temperature range Tstg −40 to 150 °C Note 1: Ta = 30°C Device mounted on a ceramic board Board size : 50 mm × 50 mm Land Pattern size : 2 mm × 2 mm Board thickness : 0.64 mm JEDEC JEITA TOSHIBA Weight: 0.023 g (typ.) ― ― 3-4E1S Note 2: Using continuously under heavy loads (e.g.
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