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C2458L - Silicon NPN Transistor

This page provides the datasheet information for the C2458L, a member of the C2458 Silicon NPN Transistor family.

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Datasheet Details

Part number C2458L
Manufacturer Toshiba Semiconductor
File Size 174.99 KB
Description Silicon NPN Transistor
Datasheet download datasheet C2458L Datasheet
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Full PDF Text Transcription

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2SC2458(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Low Noise Audio Amplifier Applications Unit: mm · High current capability: IC = 150 mA (max) · High DC current gain: hFE = 70~700 · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) · Low noise: NF (2) = 0.2dB (typ.), 3dB (max) · Complementary to 2SA1048 (L). · Small package. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 50 200 125 -55~125 Unit V V V mA mA mW °C °C JEDEC ― JEITA ― TOSHIBA 2-4E1A Weight: 0.13 g (typ.
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