3SK199 - Silicon N Channel Dual Gate MOS Type FET

Toshiba

Datasheet Details

Part number	3SK199
Manufacturer	Toshiba
File Size	179.72 KB
Description	Silicon N Channel Dual Gate MOS Type FET
Datasheet	3SK199 Datasheet

Other Datasheets by Toshiba

Part Number	Description
3SK195	Silicon N Channel Dual Gate MOS Type FET
3SK126	N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS)
3SK127	N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER/ UHF MIXER APPLICATIONS)
3SK151	N CHANNEL DUAL GATE MOS TYPE (TV TYNER VHF MIXER/ VHF RF AMPLIFIER APPLICATIONS)
3SK153	N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF/ VHF WIDE BAND RF AMPLIFIER APPLICATIONS)
3SK207	Silicon N Channel Dual Gate MOS Type FET
3SK225	Silicon N Channel Dual Gate MOS Type FET
3SK226	Silicon N Channel Dual Gate MOS Type FET
3SK240	GaAs N-Channel Dual Gate MES Type FET
3SK249	N-CHANNEL DUAL GATE MOS TYPE TRANSISTOR

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3SK199 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK199 TV Tuner, UHF RF Amplifier Applications Unit: mm · Superior cross modulation performance. · Low reverse transfer capacitance: Crss = 0.015 pF (typ.) · Low noise figure: NF = 1.9dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2S ID PD Tch Tstg Rating 13.5 ±8 ±8 30 150 125 -55~125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3J1A Weight: 0.013 g (typ.