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2SK3758
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS )
2SK3758
Switching Regulator Applications
unit
• Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) • High forward transfer admittance: |Yfs| = 3.5S (typ.) • Low leakage current: IDSS = 100 A (VDS = 500 V) • Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) /Circuit
Maximum Ratings (Ta = 25°C)
1155..66mamx.ax
2.7
3.84 0.2
3.84 0.2
101.05.5mmaax x
44..77mmaxax 1.3
1.3
6.6.66 mmaxa.
2SK3758 Datasheet
