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2SJ167 - P-Channel MOSFET

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Part number 2SJ167
Manufacturer Toshiba Semiconductor
File Size 511.78 KB
Description P-Channel MOSFET
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ167 High Speed Switching Applications Analog Switch Applications Interface Applications 2SJ167 Unit: mm • Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 mS (min) • Low on resistance: RDS (ON) = 1.3 Ω (typ.) • Enhancement-mode • Complementary to 2SK1061 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −60 V Gate-source voltage VGSS ±20 V Drain current DC Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range ID IDP PD Tch Tstg −200 −800 300 150 −55~150 mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-4E1E Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.
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