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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6076
Power Amplifier Applications Power Switching Applications
2SC6076
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 μs (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage
Collector current
Base current Collector power dissipation Junction temperature Storage temperature range
DC Pulse
Tc = 25℃
VCBO VCEX VCEO VEBO
IC ICP IB PC Tj Tstg
160
V
160
V
80
V
9
V
3
A
5
A
1.5
A
10
W
150
°C
−55 to 150
°C
1 : BASE 2 : COLLECTOR（HEAT SINK） 3 : EMITTER
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight:0.36g (typ.
2SC6076 Datasheet
