2SC5354
TOSHIBA Transistor Silicon NPN Triple Diffused Type
High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications
Unit: mm
- Excellent switching times: tr = 0.7 μs (max) tf = 0.5 μs (max) (IC = 2 A)
- High breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
Tj Tstg
5 A
°C
- 55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the...
