2SC5232
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
General Purpose Amplifier Applications Switching and Muting Switch Application
Unit: mm
- Low saturation voltage: VCE (sat) (1) = 15 m V (typ.) @IC = 10 m A/IB = 0.5 m A
- Large collector current: IC = 500 m A (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 15 V
Collector-emitter voltage Emitter-base voltage Collector current Base current
VCEO VEBO
IC IB
12 V 5V 500 m A 50 m A
Collector power dissipation Junction temperature Storage temperature range
PC 150 m W
Tj 125 °C
Tstg
- 55 to 125
°C
JEDEC JEITA
TO-236MOD SC-59
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-3F1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 12 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/...
