The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3268
2SC3268
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· NF = 1.7dB, |S21e|2 = 15.0dB (f = 500 MHz) · NF = 2dB, |S21e|2 = 9.5dB (f = 1000 MHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation
Collector power dissipation
VCBO VCEO VEBO
IB IC PC PC (Note 1)
17 12 3 30 70 300
800
V V V mA mA mW
mW
Junction temperature Storage temperature range
Tj 125 °C
Tstg
-55~150
°C
Note 1: When mounted ceramic substrate of 250 mm2 ´ 0.8 mmt
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-5K1A
Weight: 0.052 g (typ.