• Part: 2SC1169
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 64.99 KB
Download 2SC1169 Datasheet PDF
Toshiba
2SC1169
FEATURES : . Output Power : P =2.5W (Min.) ( f=175MHz, VCC=13.5V, Pi=0.25W ) 09.39MAX. 6.5MAX . Unit in mm r TTTT pa 45 THT- n 2 6 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO v CEO 'EBO ic stg ELECTRICAL CHARACTERISTICS (Ta=25°C) RATING 40 20 10 175 -65-175 UNIT 1. EMITTER f CASE) 2. BASE 3. COLLECTOR °C TOSHIBA 2- 9A1B Weight : 3.7^ CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Collector-Base Breakdown Voltage ICBO VCB =15V, I E=0 V(BR)CB0 I c=lm A, Ie=0 Collector-Emitter Breakdown Voltage V (BR) CEO I c=10m A, Ib=0 Emitter-Base Breakdown Voltage v (BR) EBO I E =lm A, I C =0 DC Current Gain h FE VCE=5V, I C =0.2A Collector Output Capacitance Cob V CB=10V, IE=0, f=l MHz Output Power Po (Fig.) Power...