The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon PNP Diffused Type (PCT process)
2SB906
2SB906
Audio Frequency Power Amplifier Application
Unit: mm
• Low collector saturation voltage : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)
• High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−60
V
Emitter-base voltage
VEBO
−7
V
Collector current
IC
−3
A
Base current
IB
−0.5
A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.0 W
20
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-7J1A
Note: Using continuously under heavy loads (e.g.
2SB906 Datasheet
