The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington)
2SB1457
Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications
2SB1457
Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max)
(IC = −1 A, IB = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO IC (DC) IC (Pulse)
IB PC Tj Tstg
−100 −100
−8 −2 −3 −0.5 900 150 −55 to 150
V V V A A A mW °C °C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.
2SB1457 Datasheet
