The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1298
Low Frequency Power Amplifier Application Power Switching Applications
2SA1298
Unit: mm
⚫ High DC current gain: hFE = 100 to 320 ⚫ Low saturation voltage: VCE (sat) = −0.4 V (max)
(IC = −500 mA, IB = −20 mA) ⚫ Suitable for driver stage of small motor ⚫ Complementary to 2SC3265 ⚫ Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
−30
V
−25
V
−5
V
−800
mA
−160
mA
200
mW
150
°C
−55 to 150
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.
2SA1298 Datasheet
