XP151A11B0MR-G
DESCRIPTION
The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.
- APPLICATIONS
- Notebook PCs
- Cellular and portable phones
- On-board power supplies
- Li-ion battery systems
- FEATURES
Low On-State Resistance : Rds(on) = 0.12Ω@ Vgs = 10V
: Rds(on) = 0.17Ω@ Vgs = 4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 4.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-23
Environmentally Friendly : EU Ro HS pliant, Pb Free
- PIN CONFIGURATION/ MARKING
11 1 x
G：Gate S：Source D：Drain
- x represents production lot number.
- EQUIVALENT CIRCUIT
- PRODUCT NAMES
PRODUCTS
PACKAGE
ORDER UNIT
XP151A11B0MR
SOT-23
3,000/Reel
XP151A11B0MR-G(- )
SOT-23
3,000/Reel...
