TSM060N03 - N-Channel Power MOSFET

Taiwan Semiconductor

General Description

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No license, express or implied, to any intellectual property rights is granted by this document.

Key Features

100% avalanche tested.
Fast switching.
Pb-free plating.
RoHS compliant.
Halogen-free mold compound.

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TSM060N03 n-channel power mosfet by Taiwan Semiconductor - Datasheet Preview

Datasheet Details

Part number	TSM060N03
Manufacturer	Taiwan Semiconductor
File Size	430.24 KB
Description	N-Channel Power MOSFET
Datasheet	TSM060N03 Datasheet

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TSM060N03 Taiwan Semiconductor N-Channel Power MOSFET 30V, 60A, 6mΩ FEATURES ● 100% avalanche tested ● Fast switching ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound APPLICATION ● Mobile device DC-DC conversion ● Point of Load (POL) DC-DC ● Secondary Switch Rectification PDFN33 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 30 V RDS(on) (max) Qg VGS =10V VGS =4.5V 6 9 11.1 mΩ nC Notes: Moisture sensitivity level: level 3.