• Part: BAV102
  • Description: Hermetically Sealed Glass High Voltage Switching Diodes
  • Category: Diode
  • Manufacturer: Taiwan Semiconductor
  • Size: 225.49 KB
Download BAV102 Datasheet PDF
Taiwan Semiconductor
BAV102
FEATURES - High voltage switching device - Ideal for automated placement - Hermetically sealed glass - pression bonded construction - All external surfaces are corrosion resistant and leads are readily solderable - Ro HS pliant MINI MELF MECHANICAL DATA - Polarity: Indicated by black cathode band MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation Repetitive Peak Reverse Voltage Average Rectified Forward Current Non-Repetitive Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 μs PD VRRM IF(AV) IFSM 500 250 200 1.0 4.0 Operating and Storage Temperature Range TJ , TSTG -65 to +200 Electrical Characteristics PARAMETER SYMBOL Breakdown Voltage Forward Voltage Peak Reverse Current BAV100 IR = 100 μA BAV101 IR = 100 μA BAV102 IR = 100 μA BAV103 IR = 100 μA IF = 100 m A BAV100 VR = 50 V BAV101 VR = 100 V BAV102 VR = 150 V BAV103 VR = 200 V BV VF IR Thermal Resistance, Junction to...