• Part: 1N6263W
  • Description: Surface Mount Schottky Barrier Diode
  • Category: Diode
  • Manufacturer: Taiwan Semiconductor
  • Size: 33.30 KB
Download 1N6263W Datasheet PDF
Taiwan Semiconductor
1N6263W
Features Low forward voltage drop Guard Ring Construction for Transient Protection Fast switching time Low Reverse Capacitance Surface mount package ideally suited for automatic insertion Mechanical Data Voltage Range 60 Volts 400m Watts Power Dissipation SOD-123 0.053(1.35) Max. 0.022(0.55) Typ. Min. 0.152(3.85) 0.140(3.55) 0.010(0.25) Min. 0.112(2.85) 0.100(2.55) Case: SOD-123, Plastic Terminals: Solderable per MIIL-STD-202, Method 208 Polarity: Cathode Band Marking: Date Code and Type Code Type Code: SB Weight: 0.01 grams (approx.) 0.006(0.15) Typ. Min. 0.067(1.70) 0.55(1.40) 0.004(0.10) Max. Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Maximum Ratings Type Number Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Non-Repetitive Peak Forward Surge Current @ t ≦1.0s @ t = 10m S Power Dissipation...