TA9410E - GaN Power Transistor

General Description

The TA9410E is a broadband GaN power transistor capable of delivering 25W CW from 20MHz to 3.0GHz frequency band.

The input and output can be matched for best power and efficiency for the desired band.

Key Features

Small signal gain @ 1000MHz: 20dB.
Gain at P3dB @ 1000MHz: 17dB.
P3dB @ 1000MHz: 44dBm.
PAE @ P3dB @ 1000MHz: 57%.
50V Typical operation.
Operating frequency: 20MHz to 3.0GHz 2.0.

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TA9410E gan power transistor by Tagore - Datasheet Preview

Datasheet Details

Part number	TA9410E
Manufacturer	Tagore
File Size	1.84 MB
Description	GaN Power Transistor
Datasheet	TA9410E Datasheet

Other Datasheets by Tagore

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TA9310E	GaN Power Transistor

Full PDF Text Transcription (Reference)

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TA9410E TA9410E – 25W CW, 50V, 20 - 3000MHz GaN Power Transistor 1.0 Features ● Small signal gain @ 1000MHz: 20dB ● Gain at P3dB @ 1000MHz: 17dB ● P3dB @ 1000MHz: 44dBm ● PAE @ P3dB @ 1000MHz: 57% ● 50V Typical operation ● Operating frequency: 20MHz to 3.0GHz 2.0 Applications ● Private mobile radio handsets ● Public safety radios ● Cellular infrastructure ● Military radios 3.0 Description The TA9410E is a broadband GaN power transistor capable of delivering 25W CW from 20MHz to 3.0GHz frequency band. The input and output can be matched for best power and efficiency for the desired band. Figure 1.1 Device Image (8 Pin 6×5×0.8mm QFN Package) RoHS/REACH/Halogen Free Compliance The TA9410E is packaged in a compact, low cost Quad Flat No lead (QFN) 5x6x0.8mm, 8 leads plastic package. 4.