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N-Channel Enhancement Mode Power MOSFET
SIMFSBSS123T2
Hermetic TO39 (TO205AD) Package VDS = 100V , ID = 0.43A, RDS(ON) = 6.0Ω Fast Switching Integral Source-Drain Body Diode High Reliability and Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS
Drain - Source Voltage
VGS
Gate - Source Voltage
ID(1)
Continuous Drain Current TC = 25°C
IDM(1)(2)
Pulsed Drain Current
PD
Total Power Dissipation at TC ≤ 25°C
De-rate TC > 25°C
TJ
Operating Temperature Range
Tstg
Storage Temperature Range
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
100V ±20V 0.43A 0.575A 2.5W 20mW/°C -65 to +150°C -65 to +150°C
Max.