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OP236TX - High Reliability Hermetic Infrared Emitting Diode

This page provides the datasheet information for the OP236TX, a member of the OP235TX High Reliability Hermetic Infrared Emitting Diode family.

Datasheet Summary

Description

Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO46 housing with 0.50” (12.70 mm) leads.

Features

  • TO-46 hermetically sealed package with lens.
  • Twice the power output of GaAs at same drive current.
  • Characterized to define infrared energy along mechanical axis of device.
  • Narrow beam angle.
  • Processed to MIL-PRF-19500.

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Datasheet preview – OP236TX

Datasheet Details

Part number OP236TX
Manufacturer TT
File Size 406.86 KB
Description High Reliability Hermetic Infrared Emitting Diode
Datasheet download datasheet OP236TX Datasheet
Additional preview pages of the OP236TX datasheet.

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Full PDF Text Transcription

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High Reliability Hermetic Infrared Emitting Diode OP235TX, OP236 (TX, TXV) Obsolete (OP235TXV) Features: • TO-46 hermetically sealed package with lens • Twice the power output of GaAs at same drive current • Characterized to define infrared energy along mechanical axis of device • Narrow beam angle • Processed to MIL-PRF-19500 Description: Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO46 housing with 0.50” (12.70 mm) leads. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current, while the 890 nm wavelength closely matches the spectral response of silicon phototransistors.
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