D2014UK
Features
:
- Simplified Amplifier Design
- Suitable for Broad Band Applications
- Low Crss
- Simple Bias Circuits
- Low Noise
- High Gain
- 13d B Minimum
- Ro HS pliant
Description
:
Single-Ended RF Silicon Mosfet. 2.5W at 500MHz, 28V
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Power Dissipation
BVDSS
Drain
- Source Breakdown Voltage
BVGSS
Gate
- Source Breakdown Voltage
ID (sat)
Drain Current
Tstg
Storage Temperature
Tj
Maximum Operating Junction Temperature
Thermal Properties
SYMBOL
PARAMETER
RθJC
Thermal Resistance, Junction to Case
17.5W 65V
+20V
1A -65 to +150°C
200°C
UNITS...
