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Features
• 650V Field Stop Trench IGBT Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel Operation • RoHS Compliant • JEDEC Qualification • 175℃ Operating Temperature
Applications
UPS, Inverter, Solar, Welder
TGAN60N65F2DS
Field Stop Trench IGBT
E GC
Device
Package
Marking
Remark
TGAN60N65F2DS
TO-3PN
TGAN60N65F2DS
RoHS
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage Gate-Emitter Voltage
VCES VGES
650
V
±20
V
Continuous Collector Current
TC = 25 ℃ TC = 100 ℃
IC
120
A
60
A
Pulsed Collector Current (Note 1)
ICM
180
A
Diode Continuous Forward Current
TC = 25 ℃ TC = 100 ℃
IF
120
A
60
A
Diode Pulsed Forward Current (Note 2)
IFM
200
A
Power Dissipation
TC = 25 ℃
TGAN60N65F2DS Datasheet
