TXY8205 - Dual N-CHANNEL High Density Trench MOSFET

Key Features

High Density cell trench design for low Rds(on) Rugged and reliable Surface Mount package Lead Free Available(Green Product).

TXY8205 dual n-channel high density trench mosfet by TMOS - Datasheet Preview

Datasheet Details

Part number	TXY8205
Manufacturer	TMOS
File Size	470.50 KB
Description	Dual N-CHANNEL High Density Trench MOSFET
Datasheet	TXY8205 Datasheet

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TXY8205 Dual N CHANNEL High Density Trench MOSFET TYPE TXY8205 BVDSS 20V RDS(ON) 25mΩ@VGS=4.5V 35mΩ@VGS=2.5V ID 6A 4A Green Product Pin Description FEATURES High Density cell trench design for low Rds(on) Rugged and reliable Surface Mount package Lead Free Available(Green Product) ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDSS Drain-Source Voltage ( VGS=0V ) VGSS Gate- source Voltage ID (a) Drain Current (continuous) at TC = 25 ℃ ID Drain Current (continuous) at TC = 100 ℃ IDM (b) Drain Current (pulsed) Ptot Total Dissipation at TC = 25　℃ Tstg Storage Temperature Tj Max. Operating Junction Temperature (a) Current limited by package (b) Pulse width limited by safe operating area THERMAL DATA Rthj-amb Thermal Resistance Junction-ambient www.tmos.com.