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HX4N60 - N-Channel MOSFET

General Description

solenoid, motor drivers, relay drivers.

Key Features

  • z RDS(ON) =2.50Ω@VGS = 10 V z Low gate charge ( typical 16nC) z High ruggedness z Fast switching capability z Avalanche energy specified z Improved dv/dt capability.
  • Symbol.
  • Ordering Information Order Number Normal Lead Free Plating HX4N60-TA3-T HX4N60L-TA3-T HX4N60-TF3-T HX4N60L-TF3-T HX4N60-TM3-T HX4N60L-TM3-T HX4N60-TN3-T HX4N60L-TN3-T HX4N60-TN3-R HX4N60L-TN3-R Note:Pin Assignment: G:Gate D:Drain S:Source HX4N60L-TA3-T (1)Packing Type (2)Package Type (3)Lead Platin.

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Datasheet Details

Part number HX4N60
Manufacturer TIANJIN HUANXIN TECHNOLOGY
File Size 494.03 KB
Description N-Channel MOSFET
Datasheet download datasheet HX4N60 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HX4N60 4.4A mps,600Volts N-Channel MOSFET Power MOSFET ■ Description The HX4N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features z RDS(ON) =2.