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TEMIC
Siliconix
Si8956AZ/883
Quad N-Channel Enhancement-Mode MOSFET
Product Summary
Vos(V)
rOS(on) (Q)
O.l@VGs=lOV 20
0.2 @ VGS = 4.5 V
LCC-20 SI SI Gl D4 D4
In (A) 5 1
01
54
D1
S4
G2
G4
S2
D3
52
D3
D2 D2 G3 S3 S3 Top View
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current" Continuous Source Current (Diode Conduction)
Maximum Power Dissipation Operating Junction and Storage Thmperature Range
ITA=2S'C .ITA= 100'C
ITA=2S'C ITA= 100'C
VOS VGS
10
10M
Is
Po
TJ,T.tg
20
V ±20
5
3 A
14
3
3
W 1.3
-55 to 150
·c
Thermal Resistance Ratings
Parameter
Maximum Junction-la-Case
Notes: a. Drain current limited by package construction.
P-36673-Rev.
Si8956AZ-883 Datasheet
