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TEMIC
Siliconix
SMW60N06·18
N-Channel Enhancement-Mode Transistor, 1S-mQ rDS(on)
Product Summary
V(BR)OSS (V) 60
rOS(on) (0) 0.018
TO-247AD
DOl
l
10 (A) 60
o
Go-J
GDS ThpView
S N·Channel MOSFET
Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
Parameter
Symbol
limit
Unit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energya
Power Dissipation
Operating Junction and Storage 1l:mperature Range Lead Temperature (1116" from case for 10 sec.)
Tc = 2S·C Tc = 100·C
L=O.lmH L=0.05mH Tc = 2S·C Tc = 100·C
VDS VGS
ID
IDM IAR EAS EAR
PD
T}. Tstg TL
60 V
±20
60
40 A
240
60
180 mJ
90
105 W
42
-55 to 150 ·C
300
-CI)
=~ ~=r1;";.I;.
SMW60N06-18 Datasheet
