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BF550R - Silicon PNP HF Transistor

Download the BF550R datasheet PDF (BF550 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon pnp hf transistor.

Features

  • D High power gain D Low noise figure 1 BF550/BF550R 1 23 94 9280 BF550 Marking: LA Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tamb ≤ 60°C Junction temperature Parameters Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (25 x 20 x 15) mm3 plated with 35 mm Cu 32 95 10527 BF550R Marking: G5 Plastic case (SOT.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BF550-TEMIC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BF550R
Manufacturer TEMIC
File Size 72.68 KB
Description Silicon PNP HF Transistor
Datasheet download datasheet BF550R Datasheet

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Full PDF Text Transcription

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Silicon PNP HF Transistor Applications RF-IF amplifier specially for thick and thin film circuits. Features D High power gain D Low noise figure 1 BF550/BF550R 1 23 94 9280 BF550 Marking: LA Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tamb ≤ 60°C Junction temperature Parameters Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (25 x 20 x 15) mm3 plated with 35 mm Cu 32 95 10527 BF550R Marking: G5 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter Symbol –VCBO –VCEO –VEBO –IC Ptot Tj Value 40 40 4 25 200 125 Unit V V V mA mW °C Symbol RthJA Value 450 Unit K/W TELEFUNKEN Semiconductors Rev.
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