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TEMIC
Siliconix
P-Channel Enhancement-Mode Transistor
Product Summary
V(BR)DSS (V) -100
rnS(on) (Q) 0.20
In (A) -14
TO-257AB
S
Hermetic Package
o
2N7091
Case Isolated
GD S Top View
D P-Channel MOSFET
= Absolute Maximum Ratings (Tc 25°C Unless Othenvise Noted)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current (TJ ~ 150'C)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Lead Thmperature eh6" from case for 10 sec.)
ITc~25'C ITc ~ 100'C
ITc~25'C ITc ~ 100'C
Symbol
VDS VGS
ID IDM
PD TJ. Tstg
TL
limit
-100 ±20 -14 -8.7 -56 70 27 -55 to 150 300
Unit V
A W 'C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient Maximum Junction-to·Case Case· to-Sink
P-36731-Rev.
2N7091 Datasheet
