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BFR90A - Silicon NPN Planar RF Transistor

Features

  • D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90A Marking: BFR90A Plastic case (TO 50) 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tamb ≤ 60°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 15 2 30 300 150.
  • 65 to +150 Unit V V V mA mW °C °C Maximum Thermal Resistan.

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Datasheet Details

Part number BFR90A
Manufacturer TEMIC Semiconductors
File Size 70.02 KB
Description Silicon NPN Planar RF Transistor
Datasheet download datasheet BFR90A Datasheet

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Full PDF Text Transcription

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BFR90A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90A Marking: BFR90A Plastic case (TO 50) 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tamb ≤ 60°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 15 2 30 300 150 –65 to +150 Unit V V V mA mW °C °C Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 mm Cu Symbol RthJA Value 300 Unit K/W TELEFUNKEN Semiconductors Rev.
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