Description
Base Emitter Collector
1 1.4 0.9 3 0.2 2
3
0.6
0~0.1
0.11
http://www.tachyonics.co.kr March.2005.
Page 6 of 6
Rev.1.0
Features
- igh gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz
0.90±0.1
Pin Configuration (TBN6301U) 1. Base 2. Emitter 3. Collector.
- Absolute Maximum Ratings (TA = 25 ℃)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Operating Junctio.
TBN6301 Datasheet
