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TS2300E
Single N-Channel Power MOSFET
VDSS(V) 20
RDS (ON)
21mΩ(Typ)@VGS=4.5V 29mΩ(Typ)@VGS=2.5V
ID(A)
5.2
FEATURE: • The TS2300E is the high cell density trenched N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
Pin Description
SOT-23
APPLICATIONS:
ͨʢʱ´ú • Load Switch for Portable Devices
• Power Management
Ordering and Marking Information
Product ID
Marking
Package
Packaging
TS2300E
2300
SOT23
Tape&Reel
Absolute Maximum Ratings
Symbol
VDSS VGSS
ID
TJ
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current(VGS= -4.