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VP1008 - P-Channel Enhancement-Mode Vertical DMOS FETs

Features

  • D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices Order Number I Package TO-39 TO-92 VP0808B VP1008B VP0808L VP1008L Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturi.

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Datasheet Details

Part number VP1008
Manufacturer Supertex
File Size 113.10 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VP1008 Datasheet
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Full PDF Text Transcription

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IIl1 "-11 § u per tex inc. VP0808 VP1008 P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVOGS -80V -100V ROSION) (max) 5f.! 5f.! JOlON) (min) -UA -1.1A Features D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices Order Number I Package TO-39 TO-92 VP0808B VP1008B VP0808L VP1008L Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
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